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Ballistic transport in nanodevices based on single-crystalline Cu thin films
Yongjin Cho1, Su Jae Kim2, Min-Hyoung Jung3
1Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.
Nature Communications
|March 6, 2026
Summary
Ballistic transport was achieved in copper films, enabling scalable quantum electronics. This breakthrough in nanoscale devices opens new avenues for quantum technologies.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Ballistic transport allows charge carriers to move without scattering, preserving quantum coherence over longer distances.
- Nanoscale materials like carbon nanotubes and graphene exhibit ballistic transport but lack scalability.
- Metal films offer scalability but typically have short electronic mean free paths, hindering ballistic transport.
Purpose of the Study:
- To investigate electronic transport in nanoscale copper (Cu) films.
- To determine if ballistic transport can be achieved in scalable Cu devices.
- To explore the potential of Cu for next-generation quantum electronic technologies.
Main Methods:
- Fabrication of cross-geometry devices using 90-nm-thick Cu films without grain boundaries.
- Measurement of electronic transport properties.
- Utilizing negative bend resistance measurements to demonstrate ballistic transport.
Main Results:
- Demonstrated ballistic transport in Cu films with channel widths of 150 nm.
- Achieved ballistic transport at temperatures below 85 K.
- Confirmed the absence of grain boundaries in the fabricated Cu films.
Conclusions:
- Established a scalable platform for exploring quantum mechanical properties of Cu.
- Advanced the fundamental understanding of quantum transport in metals.
- Paved the way for practical applications in next-generation electronic quantum technologies.
