Enhanced photon generation in a Nb/n-InGaAs/p-InP superconductor/semiconductor-diode light emitting device
H Sasakura1, S Kuramitsu, Y Hayashi
1Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan. hirotaka@eng.hokudai.ac.jp
Physical Review Letters
|November 24, 2011
Summary
Superconducting Cooper pairs significantly boost light emission in semiconductors. This proximity effect enhances photon generation for optoelectronics, opening new research avenues.
Area of Science:
- Solid State Physics
- Optoelectronics
- Superconductivity
Background:
- Semiconductor optoelectronics rely on efficient radiative recombination.
- Superconducting proximity effect enables unique electronic phenomena.
Purpose of the Study:
- To demonstrate Cooper pairs' enhancement of radiative recombination in semiconductors.
- To explore the potential of superconductivity in optoelectronic devices.
Main Methods:
- Injecting electron Cooper pairs from a superconducting electrode into a semiconductor active layer.
- Injecting holes from a p-type electrode.
- Measuring radiative decay time at varying temperatures.
Main Results:
- Cooper pair recombination drastically increases photon generation probability.
- Radiative decay time significantly decreases below the superconducting transition temperature.
- Observed enhancement in the optical-fiber communication band.
Conclusions:
- Cooper pairs can significantly enhance band-to-band radiative recombination.
- This work suggests a novel approach for high-performance optoelectronic devices.
- Potential for interdisciplinary research bridging superconductivity and optoelectronics.
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