Silicon hybrid plasmonic submicron-donut resonator with pure dielectric access waveguides

Characteristic analyses are given for a bent silicon hybrid plasmonic waveguide, which has the ability of submicron bending (e.g., R = 500 nm) even when operating at the infrared wavelength range (1.2 μm~2 μm). A silicon hybrid plasmonic submicron-donut resonator is then presented by utilizing the sharp-bending ability of the hybrid plasmonic waveguide. In order to enable long-distance optical interconnects, a pure dielectric access waveguide is introduced for the present hybrid plasmonic submicron-donut resonator by utilizing the evanescent coupling between this pure dielectric waveguide and the submicron hybrid plasmonic resonator. Since the hybrid plasmonic waveguide has a relatively low intrinsic loss, the theoretical intrinsic Q-value is up to 2000 even when the bending radius is reduced to 800 nm. By using a three-dimensional finite-difference time-domain (FDTD) method, the spectral response of hybrid plasmonic submicron-donut resonators with a bending radius of 800 nm is simulated. The critical coupling of the resonance at around 1423 nm is achieved by choosing a 80 nm-wide gap between the access waveguide and the resonator. The corresponding loaded Q-value of the submicron-donut resonator is about 220.