Related Experiment Video

Updated: May 27, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Controlling the electrical behavior of semiconducting carbon nanotubes via tube contact

Ana Paula M Barboza1, Sabrina S Carara, Ronaldo J C Batista

  • 1Departamento de Física, ICEx, Universidade Federal de Minas Gerais-UFMG, C.P. 702, 30123-970 Belo Horizonte, Brazil.

Small (Weinheim an Der Bergstrasse, Germany)
|November 24, 2011
PubMed

Keywords:
carbon nanotubesdiamonddopingelectronic structuresemiconductors

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy08:10

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

Published on: February 5, 2017

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...