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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Reconfigurable silicon nanowire transistors.

André Heinzig1, Stefan Slesazeck, Franz Kreupl

  • 1Namlab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany.

Nano Letters
|November 25, 2011
PubMed
Summary
This summary is machine-generated.

Researchers developed a universal transistor that can switch between p-type and n-type field-effect transistor (FET) functions. This novel nanotransistor technology avoids dopants and offers enhanced electrical characteristics for flexible circuit design.

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Complementary metal-oxide-semiconductor (CMOS) technology has dominated electronics for 30 years, utilizing p-type and n-type field-effect transistors (FETs) to minimize static power consumption.
  • Conventional FETs are limited to static electrical functions, lacking the ability to change their electrical characteristics after fabrication.

Purpose of the Study:

  • To introduce a novel universal transistor concept capable of reversible configuration as either a p-FET or n-FET.
  • To demonstrate a nanotransistor technology that overcomes the limitations of static electrical functions in conventional devices.

Main Methods:

  • Development of an axial nanowire heterostructure (metal/intrinsic-silicon/metal) with independently gated Schottky junctions.
  • Utilizing selective and sensitive control of charge carrier injections at Schottky junctions to determine charge carrier polarity and concentration, bypassing the need for dopants.
  • Experimental measurements and theoretical calculations to validate the device's functionality and characteristics.

Main Results:

  • Successful demonstration of a universal transistor that can be reconfigured between p-FET and n-FET functionalities via an applied electric signal.
  • Fabricated nanoscale devices exhibit enhanced electrical properties, including a record on/off ratio of up to 1 × 10^9 for Schottky transistors.
  • The technology avoids the use of dopants, relying on controlled charge carrier injection for transistor operation.

Conclusions:

  • The developed nanotransistor technology offers unprecedented circuit design flexibility through reconfigurable logic computations.
  • This universal transistor concept paves the way for compact and adaptable hardware platforms for future electronic applications.
  • The ability to dynamically alter transistor type (p-FET/n-FET) represents a significant advancement beyond traditional static CMOS devices.