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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate
Jinhua Li1, Zhenhua Sun, Feng Yan
1Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong (ROC).
Advanced Materials (Deerfield Beach, Fla.)
|November 26, 2011
Abstract
No abstract available in PubMed .

