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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate

Jinhua Li1, Zhenhua Sun, Feng Yan

  • 1Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong (ROC).

Advanced Materials (Deerfield Beach, Fla.)
|November 26, 2011
PubMed
Abstract

No abstract available in PubMed .

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