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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

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Related Experiment Video

Updated: May 27, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Single electron transistor with P-type sidewall spacer gates.

Jung Han Lee1, Dong Hua Li, Joung-Eob Lee

  • 1Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea.

Journal of Nanoscience and Nanotechnology
|November 30, 2011
PubMed
Summary

A novel single-electron transistor (SET) operates at room temperature using work function differences, simplifying circuit design. This work function-based SET avoids complex biasing, reducing power consumption and design complexity for advanced electronics.

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Area of Science:

  • Solid-state physics
  • Nanoelectronics
  • Semiconductor device physics

Background:

  • Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) face scaling limitations.
  • Single-Electron Transistors (SETs) offer a potential solution to overcome these scaling limits.
  • Existing dual-gate (DG) SETs require complex biasing, increasing circuit design complexity and power consumption.

Purpose of the Study:

  • To introduce a new mechanism for operating a SET at room temperature using work function (WF) differences.
  • To simplify SET operation by eliminating the need for extra side gate biasing.
  • To reduce circuit design complexity and operational power consumption in SETs.

Main Methods:

  • A novel SET structure utilizing work function differences between an undoped active region and n-doped source/drain electrodes with metal/silicide or p-type silicon side gates was designed.
  • Simulations were performed using various silicide materials with different WF values to confirm the mechanism's effectiveness.
  • A SET with p-type sidewall spacer gates was designed considering realistic fabrication processes, with its electrical barrier characteristics and control gate controllability confirmed via simulation.

Main Results:

  • The effectiveness of the work function difference mechanism for room temperature SET operation was confirmed through simulations.
  • Simulations demonstrated the feasibility of using different silicide materials to tune the tunnel barrier properties.
  • The designed SET with p-type sidewall spacer gates exhibited controllable electrical barrier characteristics.

Conclusions:

  • A new, simplified mechanism for room temperature SET operation based on work function differences has been successfully demonstrated via simulation.
  • This approach effectively reduces the complexity and power consumption associated with traditional dual-gate SETs.
  • The study also explored the design of a single-hole transistor with n-type sidewall spacer gates.