Impact of strain engineering on nanoscale strained InGaAs MOSFET devices

The strain distributions in the In(0.53)Ga(0.47)As channel regions of the In(0.4)Ga(0.6)As source/drain (S/D) with various lengths and widths were studied via 3D process simulations. The resulting mobility improvement was analyzed. The tensile strain along the transport direction was found to dominate the mobility improvement. The strain along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while the strain along the width direction was slightly degraded. The impact of the channel width and length on the performance improvement, such as on the mobility gain, was analyzed via TCAD simulations. The novelty of this paper stems from its study of the impact of the channel width and length on the performance of InGaAs NMOSFETs, such as on their mobility gain, and from its exploration of physical insights for scaling the future III-V MOS devices.