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Modeling of Diode Reverse Characteristics

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In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
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Related Experiment Video

Updated: May 27, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

High-side nLDMOS design for ensuring breakdown voltages over 100 V.

Kunsik Sung¹, Taeyoung Won

¹Department of Electrical Engineering, School of Engineering, Inha University, Incheon, 402-751, Korea.

Journal of Nanoscience and Nanotechnology

|November 30, 2011

Summary

We developed a new High-Side n-channel LDMOSFET structure achieving over 100 V breakdown voltage. This optimized device offers a low specific on-resistance of 2.40 mΩ·cm², enhancing power electronics performance.

Related Experiment Videos

Last Updated: May 27, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Area of Science:

Semiconductor Device Physics
Power Electronics
Integrated Circuit Technology

Background:

Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistors (LDMOSFETs) are crucial for high-voltage applications.
Conventional Bipolar-CMOS-DMOS (BCD) processes face challenges in balancing high breakdown voltage with low on-resistance.

Purpose of the Study:

To propose and optimize a novel n-channel LDMOSFET structure for high-side applications.
To achieve a breakdown voltage exceeding 100 V within the thermal budget of a 0.35 µm BCD process.
To simultaneously reduce specific on-resistance while enhancing breakdown characteristics.

Main Methods:

Device structure optimization by varying the gap between the DEEP N-WELL and the source center.
Doping profile refinement using an N(ADJUST)-layer to control surface concentration.
Fabrication and characterization of prototype High-Side n-channel LDMOS structures.
Numerical simulations to analyze impact ionization rate distribution.

Main Results:

The proposed High-Side n-channel LDMOS structure achieved a breakdown voltage (BVdss) of 120 V.
The specific on-resistance was measured at a low value of 2.40 mΩ·cm².
Numerical simulations showed a shift of maximum impact ionization rate towards the drain side, reducing it to 18.61 cm⁻³s⁻¹ compared to 25.44 cm⁻³s⁻¹ in conventional structures.

Conclusions:

The novel LDMOSFET structure effectively enhances breakdown voltage and reduces specific on-resistance.
The optimized doping and structural parameters contribute to improved device performance and reliability.
This design offers a promising solution for advanced high-voltage power integrated circuits.