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Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate
Jeong-Hoon Lee1, Kwan-Woo Song, Min-Ho Park
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Journal of Nanoscience and Nanotechnology
|November 30, 2011
Summary
This study demonstrates a novel method for synthesizing graphene at the interface of nickel (Ni) film and silicon dioxide/silicon (SiO2/Si) substrates using chemical vapor deposition (CVD). This technique enables direct formation of graphene/SiO2/Si structures, eliminating the need for graphene transfer processes in electronic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Graphene synthesis often involves complex transfer steps, hindering its integration into electronic devices.
- Chemical vapor deposition (CVD) is a scalable method for producing high-quality graphene.
- Achieving direct growth of graphene on insulating substrates like silicon dioxide is challenging.
Purpose of the Study:
- To develop a direct synthesis method for graphene on SiO2/Si substrates.
- To investigate the formation of graphene at the interface between a nickel film and a SiO2/Si substrate.
- To eliminate the requirement for post-synthesis graphene transfer for electronic applications.
Main Methods:
- Synthesis of graphene using chemical vapor deposition (CVD) at the interface between a nickel (Ni) film and a SiO2/Si substrate.
- Utilizing the diffusion of carbon atoms through the Ni film to the Ni/SiO2 interface for graphene formation.
- Characterization of synthesized graphene using Raman spectroscopy and optical microscopy.
Main Results:
- Graphene was successfully synthesized at the interface between the Ni film and the SiO2/Si substrate.
- The coverage of the interface graphene was observed to be dependent on synthesis temperature and time.
- The diffusion of carbon atoms into the Ni film directly influenced the graphene coverage at the interface.
Conclusions:
- A novel CVD approach enables direct synthesis of graphene at the Ni/SiO2 interface, forming graphene/SiO2/Si structures.
- This interface growth method bypasses the need for graphene transfer, simplifying fabrication for electronic applications.
- The synthesis parameters, including temperature and time, critically control the graphene coverage and quality.
