Related Experiment Video
Updated: May 26, 2026
10:53
Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material
Published on: February 5, 2019
A non-volatile memory device consisting of graphene oxide covalently functionalized with ionic liquid
Prasenjit Bhunia1, Eunhee Hwang, Misook Min
1NCRI, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Chemical Communications (Cambridge, England)
|December 7, 2011
Summary
We developed a stable non-volatile memory device using ionic liquid functionalized graphene oxide. This novel approach ensures reliable data storage with long retention times, marking a significant advancement in memory technology.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Non-volatile memory is crucial for modern electronics.
- Graphene oxide (GO) derivatives offer potential for advanced memory applications.
- Ionic liquids (ILs) can be used to modify material properties.
Purpose of the Study:
- To develop a novel non-volatile resistive crossbar memory device.
- To investigate the performance and stability of the new memory device.
- To explore the use of functionalized graphene oxide in memory applications.
Main Methods:
- Covalent functionalization of partially reduced graphene oxide (PrGO) with ionic liquid.
- Fabrication of resistive crossbar memory devices.
- Testing of write-read-erase-read (WRER) cycles and data retention.
Main Results:
- The developed device demonstrated stable WRER cycles over several hundred repetitions.
- Both ON and OFF states exhibited stable retention times exceeding 1000 seconds.
- The functionalized PrGO effectively enabled non-volatile memory operation.
Conclusions:
- The ionic liquid-functionalized PrGO is a promising material for non-volatile resistive memory.
- The device exhibits excellent stability and retention, suitable for practical applications.
- This work contributes to the development of next-generation memory technologies.
More Related Videos
Related Concept Videos
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
02:18Network Covalent Solids
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...