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Reflectively coupled waveguide photodetector for high speed optical interconnection.

Shih-Hsiang Hsu1

  • 1Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd. Taipei, Taiwan. shsu@mail.ntust.edu.tw

Sensors (Basel, Switzerland)
|December 14, 2011
PubMed
Summary

This study integrates In0.53Ga0.47As photodetectors with GaAs waveguides for high-speed optical monitoring. The monolithic integration achieves efficient wavelength division multiplexing monitoring with excellent performance.

Keywords:
echelle gratingphotodetectorswaveguides

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Integrated Photonics

Background:

  • Gallium Arsenide (GaAs) offers high drift mobility crucial for high-speed electronic devices.
  • Monolithic integration of dissimilar materials presents challenges in photonic and electronic device fabrication.
  • Photodetectors are essential components for optical signal detection and monitoring in communication systems.

Purpose of the Study:

  • To review techniques for monolithically integrating Indium Gallium Arsenide (In0.53Ga0.47As) p-i-n photodetectors with GaAs optical waveguides.
  • To demonstrate a high-speed monitoring function using these integrated devices.
  • To evaluate the performance of the integrated photodetectors for wavelength division multiplexing (WDM) applications.

Main Methods:

  • Utilizing total internal reflection coupling for integrating In0.53Ga0.47As photodetectors with GaAs waveguides.
  • Employing metal coplanar waveguides on a polyimide layer for planarization and passivation.
  • Implementing the integrated photodetectors on an echelle grating for WDM monitoring.

Main Results:

  • Achieved a photodetector channel spacing of 2 nm and a pass band of 1 nm (-1 dB level) within the 1,520-1,550 nm wavelength range.
  • Demonstrated a temporal response full-width half-maximum of 30 ps and a 3-dB bandwidth of 11 GHz for reflectively coupled waveguide photodetectors.
  • Exhibited error-free operation at 10 Gbit/s with a pseudo-random bit sequence input, confirming robust bit error rate performance.

Conclusions:

  • Monolithic integration of In0.53Ga0.47As photodetectors with GaAs waveguides is feasible and effective for high-speed optical monitoring.
  • The developed integrated photodetectors are suitable for WDM monitoring with precise channel spacing and bandwidth.
  • The demonstrated high-speed performance and error-free operation confirm the potential of these devices in advanced optical communication systems.