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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

High-performance low-voltage organic field-effect transistors prepared on electro-polished aluminum wires

Sooji Nam1, Jaeyoung Jang, Jong-Jin Park

  • 1Samsung Advanced Institute of Technology (SAIT), Yongin, 449-712, Republic of Korea.

ACS Applied Materials & Interfaces
|December 20, 2011
PubMed

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