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Updated: May 26, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Strained MOSFETs on ordered SiGe dots
Johann Cervenka1, Hans Kosina, Siegfried Selberherr
1Institute for Microelectronics, Technische Universität Wien, Gusshausstraße 27-29, 1040 Wien, Austria.
Abstract:
The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on the extracted structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted.
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