Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Energy Bands in Solids01:01

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling.

Scientific reports·2025
Same author

Editorial for the Topic on Magnetic Materials and Devices.

Micromachines·2025
Same author

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence.

Micromachines·2024
Same author

Advanced Modeling and Simulation of Multilayer Spin-Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling.

Micromachines·2024
Same author

Editorial for the Special Issue on Magnetic and Spin Devices, Volume II.

Micromachines·2023
Same author

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices.

Micromachines·2023

Related Experiment Video

Updated: May 12, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Subband engineering in n-type silicon nanowires using strain and confinement.

Zlatan Stanojević1, Viktor Sverdlov, Oskar Baumgartner

  • 1Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, 1040 Wien, Austria.

Solid-State Electronics
|April 9, 2013
PubMed
Summary

We developed a k·p theory model for ultra-thin strained silicon nanowires. This model predicts significant electron mobility enhancement through combined strain and confinement, especially for specific crystal orientations.

Keywords:
One-dimensional electron gasSilicon nanowiresStrained siliconSubband structureTwo-band k · p model

More Related Videos

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Related Experiment Videos

Last Updated: May 12, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Area of Science:

  • Condensed matter physics
  • Materials science
  • Nanotechnology

Background:

  • Ultra-thin strained silicon nanowires are crucial for advanced electronics.
  • Understanding subband structure effects is key to optimizing carrier transport.
  • Existing models may not fully capture the interplay of strain and confinement.

Purpose of the Study:

  • To present a k·p theory model for ultra-thin strained silicon nanowires.
  • To investigate the impact of crystal orientation, thickness, and strain on electron effective mass and valley minima.
  • To analyze how strain and confinement influence electron mobility.

Main Methods:

  • Utilizing k·p theory to model subband structure.
  • Calculating effective mass and valley minima for electrons.
  • Simulating transport properties under varying strain and confinement conditions.

Main Results:

  • Electron effective mass and valley minima are sensitive to crystal orientation, thickness, and strain.
  • Electron mobility enhancement is highly dependent on nanowire crystal orientation.
  • Combined strain and confinement effects on mobility are more significant in nanowires than thin films.

Conclusions:

  • A k·p model accurately captures subband effects in strained silicon nanowires.
  • Optimal electron transport properties can be achieved by combining strain and confinement.
  • Results align with recent experimental observations in nanowire devices.