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Editorial for the Special Issue on Magnetic and Spin Devices, Volume II

Viktor Sverdlov1, Seung-Bok Choi2,3

  • 1Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, 1040 Vienna, Austria.

Micromachines
|November 25, 2023
PubMed
Summary

Miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFETs) faces challenges. These issues in complementary metal-oxide-semiconductor (CMOS) device scaling are nearing saturation, impacting integrated circuit advancements.

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