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Updated: May 26, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Topological insulator quantum dot with tunable barriers
Sungjae Cho1, Dohun Kim, Paul Syers
1Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA.
Abstract:
Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.
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