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Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS3 Transistors
Thomas W Song1, M S Nicholas Tey1, Junjie Wang1
1Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Nano Letters
|July 6, 2026
Summary
This study shows electrostatic control of van der Waals antiferromagnetic semiconductors like FePS3. Gate voltage tuning of magnetotransport properties opens new avenues for spintronic applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Van der Waals (vdW) antiferromagnetic semiconductors offer electromagnetic control and inherent advantages of antiferromagnets.
- FePS3 exhibits semiconducting properties and anisotropic magnetism with high metamagnetic transition fields (>30 T).
Purpose of the Study:
- To demonstrate gate-tunable magnetotransport in FePS3 using vdW materials.
- To investigate the influence of electrostatic gating on the magnetoresistance of FePS3.
Main Methods:
- Fabrication of FePS3 field-effect transistors using vdW materials.
- Magnetoresistance measurements across a wide temperature range (5–300 K).
Main Results:
- Achieved gate-tunable magnetotransport in FePS3 devices.
- Observed multiple negative-to-positive magnetoresistance (MR) crossings.
- Demonstrated MR sign switching with gate voltage near the Néel temperature, linked to magnetic fluctuations.
Conclusions:
- Electrostatic tuning of FePS3's magnetotransport is feasible.
- This tunability enables the use of antiferromagnets with high metamagnetic fields in spintronics.
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