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Updated: May 26, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Observation of hysteretic transport due to dynamic nuclear spin polarization in a GaAs lateral double quantum dot
Takashi Kobayashi1, Kenichi Hitachi, Satoshi Sasaki
1NTT Basic Research Laboratories, NTT Corporation, Morinosato-Wakamiya, Atsugi, Japan.
Abstract:
We report a new transport feature in a GaAs lateral double quantum dot that emerges for magnetic-field sweeps and shows hysteresis due to dynamic nuclear spin polarization (DNP). This DNP signal appears in the Coulomb blockade regime by virtue of the finite interdot tunnel coupling and originates from the crossing between ground levels of the spin triplet and singlet extensively used for nuclear spin manipulations in pulsed-gate experiments. The magnetic-field dependence of the current level is suggestive of unbalanced DNP between the two dots, which opens up the possibility of controlling electron and nuclear spin states via dc transport.
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