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Related Concept Videos

Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
The Ideal Diode01:15

The Ideal Diode

A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Small-signal Diode Model01:18

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

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A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

An all-silicon passive optical diode.

Li Fan1, Jian Wang, Leo T Varghese

  • 1Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.

Science (New York, N.Y.)
|December 24, 2011
PubMed
Summary
This summary is machine-generated.

Researchers developed a passive silicon optical diode for on-chip processing. This device achieves a high forward-backward transmission ratio, enabling efficient optical information routing without active components.

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Area of Science:

  • Photonics
  • Nonlinear Optics
  • Integrated Optics

Background:

  • Achieving a passive optical diode effect is crucial for on-chip optical information processing.
  • Existing methods often require active components or are difficult to implement.

Purpose of the Study:

  • To demonstrate a passive optical diode effect using silicon ring resonators.
  • To achieve high optical nonreciprocity for telecommunication wavelengths.

Main Methods:

  • Utilizing optical nonlinearity in a device with two silicon ring resonators (5 micrometer radius).
  • Operating the device passively across a broad range of input power levels.

Main Results:

  • Demonstrated a forward-backward transmission ratio of up to 28 decibels.
  • Achieved optical nonreciprocity that is robust to variations in forward and backward input power.
  • The device is ultracompact and compatible with complementary metal-oxide semiconductor (CMOS) processing.

Conclusions:

  • A passive silicon optical diode has been successfully demonstrated.
  • This device offers a promising solution for on-chip optical information processing applications.
  • The compatibility with CMOS technology facilitates integration into existing fabrication processes.