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Related Concept Videos

Ohm's Law01:21

Ohm's Law

Many materials exhibit a simple relationship between the values of current, voltage, and resistance, known as Ohm’s law. The current that flows through most substances is directly proportional to the voltage applied to them. The German physicist Georg Simon Ohm (1787–1854) was the first to demonstrate experimentally that the current in a metal wire is directly proportional to the voltage applied. Any material, component, or device that obeys Ohm’s law, where the current through the device is...
Ohm's Law01:19

Ohm's Law

Resistors are fundamental components in electrical circuits, often manufactured from metallic alloys or carbon compounds. They model a material's ability to resist the flow of electric current, a characteristic that is crucial in controlling and regulating electrical power within a circuit.
This current-resisting behavior of resistors is governed by Ohm's law, which states that the voltage across a resistor is directly proportional to the current flowing through it.
IR Spectroscopy: Hooke's Law Approximation of Molecular Vibration01:16

IR Spectroscopy: Hooke's Law Approximation of Molecular Vibration

A covalently bonded heteronuclear diatomic molecule can be modeled as two vibrating masses connected by a spring. The vibrational frequency of the bond can be expressed using an equation derived from Hooke's law, which describes how the force applied to stretch or compress a spring is proportional to the displacement of the spring. In this case, the atoms behave like masses, and the bond acts like a spring.
According to Hooke's law, the vibrational frequency is directly proportional to the...
Ampere's Law in Matter01:22

Ampere's Law in Matter

The total current density in magnetized material is the sum of the free and bound current densities. The free current arises due to the motion of free electrons within the material, while the bound current arises due to the alignment of magnetic dipole moments.
The differential form of Ampere's law in vacuum states that the curl of the magnetic field equals the permeability times the current density. In a magnetized material, the law is modified to incorporate the free and bound current...
Coulomb's Law and The Principle of Superposition01:15

Coulomb's Law and The Principle of Superposition

Coulomb's Law describes the force experienced by two point charges under each other's presence. But what if there are more than two charges? For example, if there is a third charge, does it experience a force that is a simple combination of the individual forces due to the first two charges? Can it be described mathematically?
The Principle of Superposition answers the question. Yes, Coulomb's Law applies to each pair of charges, and the net force on each charge is the vector sum of the...
Coulomb's Law01:30

Coulomb's Law

Experiments with electric charges have shown that if two objects each have an electric charge, they exert an electric force on each other. The magnitude of the force is linearly proportional to the net charge on each object and inversely proportional to the square of the distance between them. The direction of the force vector is along the imaginary line joining the two objects and is dictated by the signs of the charges involved.
Newton's third law applies to the Coulomb force — the force on...

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Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

Ohm's law survives to the atomic scale.

B Weber1, S Mahapatra, H Ryu

  • 1Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.

Science (New York, N.Y.)
|January 7, 2012
PubMed
Summary

Researchers created atomic-scale silicon wires with copper-like current capacity. This breakthrough in low resistivity demonstrates scalable electronics for future classical and quantum computing devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Silicon electronics face challenges with miniaturization due to surface and interface effects impacting electrical resistivity.
  • Maintaining low resistance in nanoscale interconnects is crucial for advanced semiconductor devices.

Purpose of the Study:

  • To fabricate and characterize atomic-scale silicon wires with ultra-low electrical resistivity.
  • To demonstrate the feasibility of scaling electrical conductivity to the atomic limit.

Main Methods:

  • Fabrication of silicon wires one atom tall and four atoms wide using atomic-level precision.
  • Embedding phosphorus atoms within the silicon crystal lattice with sub-nanometer spacing.
  • Measurement of electrical resistivity and current-carrying capabilities.
  • Atomistic tight-binding calculations to confirm electronic properties.

Main Results:

  • Achieved exceptionally low resistivity of approximately 0.3 milliohm-centimeters.
  • Demonstrated current-carrying capabilities comparable to copper.
  • Observed diameter-independent resistivity, indicating ohmic scaling to the atomic limit.
  • Confirmed the metallic nature of the atomic-scale wires.

Conclusions:

  • Atomic-scale silicon wires with embedded phosphorus exhibit remarkable low resistivity.
  • This achievement paves the way for single-atom device architectures.
  • Enables advancements in classical and quantum information processing technologies.