Epitaxial Ag wires with a single grain boundary for electromigration

Test structures for electromigration with defined grain boundary configurations can be fabricated using focused ion beam (FIB). We present a novel approach of combining epitaxial growth of Ag islands with FIB milling. Depending on the growth parameters, bi-crystalline Ag islands can be grown on Si(111) surfaces and can be structured into wires by FIB. To avoid doping effects of the used Ga FIB, silicon on insulator (SOI) substrates are used. By cutting through the device layer of the SOI substrate with deep trenches, the Ag wire can be electrically separated from the rest of the substrate. In this way, Ag wires with one isolated grain boundary of arbitrary direction can be assembled. Using scanning electron microscopy we demonstrate the feasibility of our approach.