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Field-effect transistors based on thermally treated electron beam-induced carbonaceous patterns

Narendra Kurra1, Venkata Srinu Bhadram, Chandrabhas Narayana

  • 1Chemistry & Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India.

ACS Applied Materials & Interfaces
|January 14, 2012
PubMed
Summary

Electron beam-induced carbonaceous deposition (EBICD) exhibits blue fluorescence due to sp2 carbon clusters. Graphitization above 300 °C enables its use in field-effect transistors with good mobility.

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