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From monolayer to multilayer N-channel polymeric field-effect transistors with precise conformational order
Simone Fabiano1, Chiara Musumeci, Zhihua Chen
1Dipartimento di Chimica S. Cannizzaro, Università degli Studi di Palermo, Viale delle Scienze - Parco D'Orleans II - ed. 17, Palermo, Italy.
Advanced Materials (Deerfield Beach, Fla.)
|January 18, 2012
Summary
High-mobility n-type polymer transistors were created using Langmuir-Schäfer deposition. This method achieved dense polymer packing, leading to improved transistor performance compared to spin-coated films.
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Organic field-effect transistors (OFETs) are crucial for flexible electronics.
- Achieving high performance in OFETs requires precise control over polymer morphology and packing.
- Existing deposition techniques like spin-coating can lead to less ordered films.
Purpose of the Study:
- To demonstrate monolayer field-effect transistors using a high-mobility n-type polymer.
- To investigate the impact of Langmuir-Schäfer (LS) deposition on polymer packing and transistor performance.
- To compare the performance of LS-deposited films with spin-coated films.
Main Methods:
- Fabrication of monolayer field-effect transistors.
- Utilizing Langmuir-Schäfer (LS) deposition for controlled polymer film formation.
- Characterization of polymer packing, injection properties, current on/off ratio, and carrier mobility.
- Comparative analysis with spin-coated film transistors.
Main Results:
- Accurate control of long-range polymer order was achieved via LS deposition.
- Dense polymer packing resulted in good injection properties.
- Transistors exhibited a relevant current on/off ratio and carrier mobility in a staggered configuration.
- Layer-by-layer LS films of increasing thickness showed performance variations.
Conclusions:
- LS deposition enables precise control over polymer morphology for high-performance organic electronics.
- The ordered films produced by LS deposition offer superior transistor characteristics compared to conventional spin-coating.
- This technique is promising for developing advanced organic field-effect transistors.

