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Room temperature electrical manipulation of giant magnetoresistance in spin valves exchange-biased with BiFeO3
Julie Allibe1, Stéphane Fusil, Karim Bouzehouane
1Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France, and Université Paris-Sud, 91405 Orsay, France.
Abstract:
Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the giant magnetoresistance effect (GMR) of spin valves deposited on top of BiFeO(3)-based heterostructures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109° domain walls and propose solutions toward a reversible process.
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