Micro texturing of silicon using pulsed N(2)-laser and formation mechanism

A low-cost pulsed N(2)-laser has been used to successfully demonstrate the formation of self-organized conical microtexture in Si. The process is demonstrated in vacuum environment to avoid the use of SF(6) gas and sulfur incorporation. The microtexture is formed with an average structure height of ~15 um, base diameter ~10 μm, and tip-to-tip separation ~8 μm. Energy dispersive x-ray spectroscopy of individual conelike structure shows that the material remains free from impurity incorporation. We have shown that the laser-induced-damage-related absorption can be successfully restored after an hour annealing at 1000 °C, making the material an ideal candidate for photovoltaic and other photonic applications.