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Updated: May 25, 2026

10:36
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals
Luyang Wang1, Jie Lian, Peng Cui
1National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
Abstract:
Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.
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