Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Cerebellum-inspired memtransistors enable emergent differentiation for hardware-efficient novelty detection.

Nature communications·2026

Same author

Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS<sub>3</sub> Transistors.

Nano letters·2026

Same author

The Role of Defect Geometry in Localized Emission from Monolayer Tungsten Dichalcogenides.

ACS nano·2026

Same author

Split-Gate Memtransistors for Energy-Efficient Adaptive Reinforcement Learning.

ACS nano·2026

Same author

Efficient Second-Harmonic Generation from Molecular Monolayers.

ACS nano·2026

Same author

Oxygen Distribution and Segregation at Grain Boundaries in Nb and Ta-Encapsulated Nb Thin Films for Superconducting Qubits.

ACS nano·2026

Search research articles

Related Experiment Video

Updated: May 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Flexible gigahertz transistors derived from solution-based single-layer graphene.

Cédric Sire¹, Florence Ardiaca, Sylvie Lepilliet

¹CEA Saclay, IRAMIS, Service de Physique de l'Etat Condensé (URA 2464), Laboratoire d'Electronique Moléculaire, F-91191 Gif sur Yvette, France.

|January 31, 2012

Summary

This summary is machine-generated.

Solution-processed graphene transistors achieve gigahertz frequencies on flexible plastic substrates, outperforming organic alternatives. These devices demonstrate excellent mechanical stability for high-speed flexible electronics.

More Related Videos

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Related Experiment Videos

Last Updated: May 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Flexible electronics predominantly use organic semiconductors, but their low carrier velocity limits high-frequency applications (MHz range).
Graphene shows high-frequency potential on rigid substrates, but its application in flexible electronics via solution processing was unexplored.

Purpose of the Study:

To investigate the performance of solution-based single-layer graphene transistors at gigahertz frequencies on flexible substrates.
To evaluate the mechanical stability and suitability of these graphene devices for high-speed flexible electronic applications.

Main Methods:

Fabrication of field-effect transistors using solution-processed single-layer graphene on plastic substrates.
Characterization of transistor performance, including current gain cutoff frequency (fT) and power gain cutoff frequency (fmax), at gigahertz frequencies.
Radio frequency measurements conducted on both flat and bent device configurations.

Main Results:

Demonstrated gigahertz frequency operation for solution-based graphene transistors on flexible substrates.
Achieved current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz.
Exhibited remarkable mechanical stability under bending, indicating suitability for flexible applications.

Conclusions:

Solution-based single-layer graphene is a promising material for high-speed flexible electronics, overcoming limitations of organic semiconductors.
Graphene flexible transistors offer superior performance and mechanical robustness compared to existing flexible transistor technologies.
This study establishes a pathway for developing advanced high-frequency flexible electronic systems using graphene.