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Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis
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Boron δ-doped (111) diamond solution gate field effect transistors

Robert Edgington1, A Rahim Ruslinda, Syunsuke Sato

  • 1London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH, UK.

Biosensors & Bioelectronics
|February 10, 2012
PubMed
Summary

This study introduces a novel diamond-based biosensor for cell monitoring. The new oxidised boron solution gate field effect transistor (SGFET) offers enhanced performance and stability for detecting cellular electrical activity.

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