Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Jonathan W Hennek1, Yu Xia, Ken Everaerts

  • 1Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

ACS Applied Materials & Interfaces
|February 11, 2012
PubMed

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