Dual-Mode Memristors with Controlled Cluster Dynamics for High-Performance Neuromorphic Computing
Related Experiment Video
Updated: Oct 30, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Ming Li1, Chan Hee Suk1, Hyung-Soon Kim1
1Department of Electronic Engineering, Hanyang University, Seoul04763, Republic of Korea.
Abstract:
In the process of realizing brain-like information processing based on artificial synapses, the conductive filament (CF) model has become an intensively studied topic. Its significant attraction stems from its ability to emulate the dynamic evolution of synaptic connection strengths in biological systems. However, owing to its inherent geometrical structural defects, traditional CF exhibits significant uncontrollability during its growth and dissolution processes, severely limiting the stability and accuracy of its synaptic function simulation. To address this limitation, a synaptic device was constructed in this study that features a dual-active-layer composed of polyvinylpyrrolidone (PVP): graphene-oxide quantum dots (GO QDs), and polyvinyl alcohol (PVA). The thin PVA active layer enables compliance-current-controlled regulation of dendritic conductive filaments, resulting in volatile switching at low compliance currents and nonvolatile switching at higher compliance currents, thereby enabling compliance-current-controlled dual-mode operation. Ag ions originating from the electrochemically active Ag electrode migrate into the active layer driven by the external electric field and are reduced in situ around the GO QDs in the PVP:GO QDs nanocomposite layer, forming uniformly distributed and controllable silver clusters (Ag-C), resulting in enhanced device stability and improved synaptic emulation capability. The proposed mechanism is consistent with the voltage-dependent SEM/EDS observations and previously reported charge-trapping characteristics of GO QD-containing materials. Experimental results confirmed that diverse synaptic behaviors can be realized in the device. Meanwhile, a neural-network simulation based on its synaptic characteristics demonstrated its excellent performance (94.0%) in learning and inference tasks. Such performance further highlights the potential of the device for constructing reliable neuromorphic computing architectures.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

