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Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating
1Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul, Korea.
Optics Letters
|February 21, 2012
Abstract:
A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200-1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.
