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Updated: May 24, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electric-field control of magnetic domain wall motion and local magnetization reversal
Tuomas H E Lahtinen1, Kévin J A Franke, Sebastiaan van Dijken
1NanoSpin, Department of Applied Physics, Aalto University School of Science , P.O. Box 15100, FI-00076 Aalto, Finland.
Abstract:
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO(3) heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.
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