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Related Experiment Video

Updated: May 24, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VO_x

Published on: May 13, 2020

Regenerable resistive switching in silicon oxide based nanojunctions.

Massimiliano Cavallini¹, Zahra Hemmatian, Alberto Riminucci

¹Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Bologna, Italy. m.cavallini@bo.ismn.cnr.it

Advanced Materials (Deerfield Beach, Fla.)

|February 25, 2012

Summary

Researchers developed a novel silicon dioxide (SiO2) nanomemristor with nanoscale spatial control. This device can regenerate after damage and allows interface access for further study.

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Published on: June 3, 2015

Area of Science:

Materials Science
Nanotechnology
Electrical Engineering

Background:

Memristors are fundamental electronic components with resistance dependent on past voltage.
Fabrication of nanoscale memristors with precise control remains a challenge.
Understanding memristor interface properties is crucial for device optimization.

Purpose of the Study:

To fabricate a silicon dioxide (SiO2) based nanomemristor with in situ spatial control.
To investigate the unique properties of the fabricated nanomemristor, including its regenerative capabilities and interface accessibility.

Main Methods:

In situ fabrication of SiO2 nanomemristors with nanoscale precision.
Mechanical stress and damage application to assess device resilience.
Selective removal of top electrodes to expose metal and oxide interfaces.

Main Results:

Successful fabrication of a spatially controlled SiO2 nanomemristor.
Demonstration of the nanomemristor's ability to regenerate after mechanical stress or damage.
Exposed metal and oxide interfaces after top electrode removal, enabling further characterization.

Conclusions:

The developed SiO2 nanomemristor offers a robust and accessible platform for memristive applications.
The regenerative property enhances device longevity and reliability.
Interface accessibility facilitates in-depth analysis and future device design improvements.