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The Phosphorus Cycle01:21

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Published on: June 3, 2015

Molecular phosphorus ion source for semiconductor technology.

V I Gushenets1, A S Bugaev, E M Oks

  • 1Institute of High Current Electronics SB RAS, Tomsk 634055, Russia. gvi@opee.hcei.tsc.ru

The Review of Scientific Instruments
|March 3, 2012
PubMed
Summary
This summary is machine-generated.

Researchers optimized molecular phosphorus ion beams using a hot filament ion source. Maintaining temperatures below 800°C maximized the tetra-atomic phosphorus (P(4)(+)) fraction, achieving over 30% of the total beam current.

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Preparation and Reactivity of a Triphosphenium Bromide Salt: A Convenient and Stable Source of Phosphorus(I)
08:46

Preparation and Reactivity of a Triphosphenium Bromide Salt: A Convenient and Stable Source of Phosphorus(I)

Published on: November 22, 2016

Area of Science:

  • Atomic and Molecular Physics
  • Ion Source Technology
  • Materials Science

Background:

  • Molecular phosphorus ion beams are crucial for various applications.
  • Previous ion source designs faced challenges in maximizing specific molecular ion fractions.
  • Hot filament ion sources offer a pathway for generating such beams.

Purpose of the Study:

  • To investigate the generation of molecular phosphorus ion beams.
  • To optimize conditions for maximizing the tetra-atomic phosphorus ion (P(4)(+)) fraction.
  • To enhance the performance of a hot filament ion source for phosphorus ion production.

Main Methods:

  • Utilized a hot filament ion source with solid red phosphorus.
  • Controlled evaporation temperatures of the phosphorus oven, steam line, and discharge chamber walls.
  • Modified the ion source by incorporating a discharge chamber cooling system in a prior version.

Main Results:

  • Solid red phosphorus primarily evaporates as tetra-atomic molecules (P(4)) below 800°C.
  • Maintaining temperatures at or below 800°C is critical for maximizing the P(4)(+) ion fraction.
  • The modified ion source achieved a P(4)(+) ion beam current exceeding 30% of the total beam current.

Conclusions:

  • Temperature control is a key factor in generating high-purity molecular phosphorus ion beams.
  • The optimized hot filament ion source design significantly improves P(4)(+) ion beam yield.
  • This work provides a foundation for advanced applications requiring specific molecular phosphorus ions.