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Updated: May 24, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling
V V Ravi Kishore1, N Čukarić, B Partoens
1Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium. ravi.vepakomma@ua.ac.be
Abstract:
The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k·p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E(P)) value.
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