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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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An explicit continuous analytical model for Gate All Around (GAA) MOSFETs including the hot-carrier degradation

M A Abdi1, F Djeffal, T Bentrcia

  • 11 LEA, Department of Electronics, University of Batna, Batna 05000, Algeria.

Journal of Nanoscience and Nanotechnology
|March 10, 2012
PubMed

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