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Alexander Stotland1, Massimiliano Di Ventra

  • 1Department of Physics, University of California-San Diego, La Jolla, California 92093-0319, USA.

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Memory elements like resistors can exhibit hysteresis loops induced by white noise, not just periodic signals. This finding, demonstrated in TiO(2) thin films, opens new possibilities for memory device applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nonlinear Dynamics

Background:

  • Resistors, capacitors, and inductors can exhibit hysteresis loops under periodic input.
  • Hysteresis in electronic components is crucial for memory applications.
  • Understanding noise-induced phenomena is essential for device stability and function.

Purpose of the Study:

  • To investigate the induction of hysteresis loops in memory elements by white noise.
  • To demonstrate this phenomenon in a physical model of a memory resistor.
  • To explore the implications for existing memory systems and the role of noise.

Main Methods:

  • Utilizing a physical model of a memory resistor based on TiO(2) thin films.
  • Applying white noise of appropriate intensity to the memory element.
  • Analyzing the characteristic response to identify hysteresis loop formation.

Main Results:

  • Hysteresis loops can be induced by white noise, even at low frequencies.
  • The phenomenon was demonstrated in TiO(2) thin film memory resistors.
  • Conditions for experimental observation and the role of colored noise were discussed.

Conclusions:

  • White noise can induce hysteresis in memory elements, expanding beyond traditional periodic driving.
  • This finding has significant implications for the design and understanding of novel memory systems.
  • Further research into noise-induced effects is crucial for advanced electronic devices.