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Updated: May 24, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Improbability of void growth in aluminum via dislocation nucleation under typical laboratory conditions
1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.
Abstract:
The rate at which dislocations nucleate from spherical voids subjected to shear loading is predicted from atomistic simulation. By employing the latest version of the finite temperature string method, a variational transition state theory approach can be utilized, enabling atomistic predictions at ordinary laboratory time scales, loads, and temperatures. The simulation results, in conjunction with a continuum model, show that the deformation and growth of voids in Al are not likely to occur via dislocation nucleation under typical loadings regardless of void size.
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