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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Characteristics of JFET01:21

Characteristics of JFET

Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

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Published on: April 12, 2018

Decrease of the OFF state current of carbon nanotube field effect transistors via continuous repeated gate sweeping.

Ying Feng1, Shihua Huang, Kai Kang

  • 1Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.

Journal of Nanoscience and Nanotechnology
|March 14, 2012
PubMed
Summary
This summary is machine-generated.

Continuous gate sweeping and substrate etching significantly reduce OFF-state current in single-walled carbon nanotube field-effect transistors (SWCNT-FETs). This method lowers the source-drain current, achieving levels below 2 nA by introducing defects or enabling hole trapping.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Single-walled carbon nanotube field-effect transistors (SWCNT-FETs) are promising for electronic applications.
  • High OFF-state current in SWCNT-FETs remains a challenge for device performance.
  • Optimizing fabrication and operational processes is crucial for improving SWCNT-FET characteristics.

Purpose of the Study:

  • To investigate the impact of continuous repeated gate sweeping combined with substrate etching on SWCNT-FETs.
  • To reduce the OFF-state current in SWCNT-FETs.
  • To understand the underlying mechanisms responsible for the observed current reduction.

Main Methods:

  • Incorporation of a substrate etching step during device fabrication.
  • Application of continuous repeated gate sweeping to SWCNT-FETs.
  • Analysis of transistor transfer characteristics and source-drain current variations.

Main Results:

  • The combined gate sweeping and etching process effectively decreases the OFF-state current.
  • Repeated gate sweeping leads to a progressive reduction in source-drain current, reaching below 2 nA.
  • Substrate etching creates transistor suspension and causes partial burnout of single-walled carbon nanotubes.

Conclusions:

  • Continuous gate sweeping, coupled with substrate etching, is a viable method for reducing OFF-state current in SWCNT-FETs.
  • Observed current reduction may be attributed to defects introduced in the single-walled carbon nanotube lattice.
  • Hole trapping is also considered a potential contributing factor to the improved transistor performance.