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Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Dual-site molecular passivation at the buried interface for high-efficiency and stable perovskite solar cells
Yi Dong1, Houru Zhu1, Ting Zhu2
1Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China. ftyou@bjtu.edu.cn.
Abstract:
Buried interface defects in perovskite solar cells (PSCs) critically limit the device performance and operational stability due to their role in promoting non-radiative recombination and interfacial degradation. Herein, we propose a molecular interface engineering strategy employing a bifunctional small molecule, 3,5-dimethylpyrazole-1-carboxamidin nitrate (DPN), to simultaneously modulate crystallization behavior and passivate undercoordinated Pb2+ ions at the buried interface. Morphological and crystallographic analyses reveal that DPN promotes large grain size, enhanced surface uniformity, and improved vertical crystal orientation. Spectroscopic characterizations confirm a dual-site coordination mechanism, where the pyrazole group acts as the primary coordination site, and the nitrate group provides auxiliary binding to Pb2+, collectively reducing defect densities. As a result, the DPN-modified films exhibit suppressed non-radiative recombination, extended carrier lifetimes, optimized interfacial energy alignment, and improved charge extraction. The corresponding photovoltaic devices deliver a champion power conversion efficiency (PCE) of 25.3%, along with enhanced operational and storage stability. This work demonstrates the efficacy of dual-site molecular passivation at the buried interface, offering a viable strategy for developing highly efficient and stable perovskite photovoltaics.

