Microstructure and crystallization kinetics analysis of the (In15Sb85)(100-x)Zn(x) phase change recording thin films

Area of Science:

• Materials Science
• Thin Film Technology
• Optical Recording Media

Background:

• Indium-Antimony (In15Sb85) films are investigated for optical recording applications.
• Understanding the effects of dopants on film properties is crucial for material optimization.

Purpose of the Study:

• To investigate the impact of zinc (Zn) addition on the thermal properties, crystallization kinetics, and mechanism of In15Sb85 films.
• To evaluate the potential of these Zn-doped films for blue laser optical recording media.

Main Methods:

• Thin films of (In15Sb85)(100-x)Zn(x) were fabricated using magnetron co-sputtering.
• Thermal properties were analyzed using a reflectivity thermal analyzer.
• Microstructures were examined via transmission electron microscopy (TEM).

Main Results:

• Zn addition (x = 0 - 17.4) resulted in two distinct phase transition temperature ranges: 189–215°C and 300–350°C.
• Increased activation energy with Zn content indicated improved thermal stability of the amorphous state.
• Films with Zn content up to x = 6.2 exhibited optical contrasts exceeding 15%.

Conclusions:

• Zinc doping effectively enhances the thermal stability of In15Sb85 films.
• The improved thermal stability and high optical contrast suggest suitability for blue laser optical recording media.