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Published on: November 15, 2016
Emission evolution of alpha-silicon nitride nanowires with temperature
Ligong Zhang1, Yi Fan, Shifeng Xu
1Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Abstract:
The photoluminescence and temperature dependent emission spectra of silicon nitride nanowires were investigated by using femtosecond pulse laser. Three discrete sharp emission peaks were observed in photoluminescence, which were significantly different from that pumping by low excitation intensity laser. The temperature effects on emission peak energy were extracted using Gauss function, and should be attributed to volume-temperature effect and phonon effect.
