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Single Extracellular Vesicle Transmembrane Protein Characterization by Nano-Flow Cytometry
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VECSEL gain characterization.

Mario Mangold1, Valentin J Wittwer, Oliver D Sieber

  • 1Department of Physics, Institute for Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland. mangoldm@phys.ethz.ch

Optics Express
|March 16, 2012
PubMed
Summary
This summary is machine-generated.

This study provides the first full gain characterization of vertical external cavity surface emitting laser (VECSEL) gain chips. Researchers measured saturation behavior and gain bandwidth, revealing lower saturation fluences than previously assumed.

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Area of Science:

  • Optics and Photonics
  • Semiconductor Lasers

Background:

  • Vertical external cavity surface emitting lasers (VECSELs) are crucial for various optical applications.
  • Accurate characterization of VECSEL gain properties is essential for device optimization and performance prediction.

Purpose of the Study:

  • To perform the first comprehensive gain characterization of two similar VECSEL gain chips operating at 960 nm.
  • To investigate the saturation behavior and gain bandwidth of VECSELs under different conditions.

Main Methods:

  • Optical pumping of VECSEL structures using continuous-wave (cw) 808-nm radiation.
  • Measurement of nonlinear reflectivity using 130-fs and 1.4-ps probe pulses as a function of fluence, pump power, and temperature.
  • Spectral gain characterization using a tunable cw probe beam.

Main Results:

  • Saturation fluences were determined to be 40-80 μJ/cm² for 1.4-ps pulses and 30-50 μJ/cm² for 130-fs pulses, which are lower than previously estimated.
  • A maximum small-signal gain of up to 5% was achieved.
  • A gain bandwidth exceeding 26 nm (full width at half maximum) was measured for both structures.

Conclusions:

  • The study successfully characterized VECSEL gain properties, providing valuable data for future device development.
  • The measured lower saturation fluences indicate potential for improved VECSEL performance.
  • The broad gain bandwidth suggests suitability for applications requiring wide spectral coverage.