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Updated: May 24, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Modulation of the propagation speed of mechanical waves in silicon quantum dots embedded in a silicon-nitride film
C Torres-Torres1, A López-Suárez, R Torres-Martínez
1Instituto de Física, Universidad Nacional Autónoma de México. México, D. F. 04510, México. crstorres@yahoo.com.mx
Abstract:
Using a vectorial picosecond self-diffraction method, we evaluate the modification of the speed of the sound in a silicon-nitride film containing silicon quantum dots prepared by remote plasma-enhanced chemical vapor deposition. Our non-contact technique is based on the stimulation of the electrostriction contribution to the nonlinearity of index exhibited by the sample in a multiwave mixing laser experiment. We identified the electronic birefringence using two of the incident beams to generate a self-diffraction signal, then, we modified the third order nonlinear response by means of the optical Kerr effect given by a phase-mismatched third beam which induced electrostriction. Our results indicated that the speed of the sound in a silicon-nitride film can be simultaneously tailored by an electronic nonlinear refractive index, and by an electrostriction effect, both resulting from silicon quantum dots doping.

