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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical
1Department of Physics, Chungnam National University, Daejeon 305-764, Korea.
Abstract:
Fast gain recovery observed in quantum-dot semiconductor-optical-amplifiers (QDSOAs) is useful for amplifying high-speed optical signals. The small but finite slow recovery component can deteriorate the signal amplification due to the accumulation of gain saturation during 10 Gb/s operation. A study of the gain recoveries and pattern effects in signals amplified using a 1.5 μm InAs/InGaAsP QDSOA reveals that the gain recovery is always fast, and pattern-effect-free amplification is observed at the ground state. However, at the excited state, the slow component increases with the current, and significant pattern effects are observed. Simulations of the pattern effects agreed with the observed experimental trends.

