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High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires
Haibo Dong1, Xiaoxian Zhang, Duan Zhao
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Nanoscale
|March 16, 2012
Summary
We developed novel memristive devices using zinc tin oxide (ZTO) nanowires for advanced nonvolatile memory applications. These devices exhibit excellent performance, including fast speeds and long data retention, driven by a metal filament model.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Electronics
Background:
- Resistive switching in metal-oxide-metal devices is key for next-generation nonvolatile memories.
- Nanoscale memristive devices offer potential for high-density data storage.
Purpose of the Study:
- To demonstrate novel nanoscale memristive devices utilizing zinc tin oxide (ZTO) nanowires.
- To characterize the resistive switching behavior and performance of these ZTO-based devices.
Main Methods:
- Fabrication of memristive devices based on Zn(2)SnO(4) nanowires.
- Experimental characterization of resistive switching performance, including response speed, operation voltage, and data retention.
Main Results:
- Successfully demonstrated bipolar resistive switching behavior in ZTO nanowire devices.
- Achieved ultrafast response speed (20 ns), low operation voltage (<2 V), and long data retention (>5 months).
Conclusions:
- Zn(2)SnO(4) nanowires are suitable for high-performance memristive devices.
- A metal filament formation model explains the observed bipolar resistive switching behavior.
