High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires
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Published on: May 13, 2020
Haibo Dong1, Xiaoxian Zhang, Duan Zhao
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn(2)SnO(4) nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of <2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior.
