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Updated: May 23, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Energetics and dynamics of a new type of extended line defects in graphene
Yu Li1, Rui-Qin Zhang, Zijing Lin
1Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
Abstract:
We revealed a novel extended line defect (ELD) containing tetragonal rings embedded in graphene, formed as a growth fault, with its energetic and dynamic behavior studied via first-principles calculations. In our finding based upon the molecular dynamics simulation, transformation between locally stable ELDs in graphene at high temperatures simultaneously with contrastive electronic properties can be applied to predetermine the formation process and reconstruction of ELDs.
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