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Related Experiment Video

Updated: May 23, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.

V F Olle1, P P Vasil'ev, A Wonfor

  • 1Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.

Optics Express
|March 29, 2012
PubMed
Summary

Dicke superradiance was achieved in a violet Gallium Nitride/Indium Gallium Nitride (GaN/InGaN) semiconductor laser diode. This generated high peak power, short optical pulses, similar to infrared laser diodes.

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A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
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Last Updated: May 23, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Area of Science:

  • Semiconductor laser physics
  • Optoelectronics
  • Materials science

Background:

  • Superradiance is a quantum optical phenomenon.
  • Gallium Nitride (GaN) based lasers are crucial for visible light applications.

Purpose of the Study:

  • To demonstrate Dicke superradiance in a violet GaN/InGaN semiconductor laser diode for the first time.
  • To characterize the properties of superradiant pulses generated from these devices.

Main Methods:

  • Utilized a two-section violet GaN/InGaN semiconductor laser diode.
  • Operated the laser in the superradiance regime.
  • Measured optical pulse characteristics including peak power, duration, and repetition rate.

Main Results:

  • Successfully demonstrated Dicke superradiance in a violet GaN/InGaN semiconductor laser diode.
  • Generated optical pulses with peak powers exceeding 2.8 W.
  • Achieved pulse durations as short as 1.4 picoseconds (ps) at 408 nm wavelength.
  • Observed superradiant pulse generation at repetition rates up to 10 MHz.

Conclusions:

  • The properties of superradiant pulse generation in violet GaN/InGaN laser diodes are comparable to those in infrared AlGaAs/GaAs laser diodes.
  • This work opens possibilities for high-power, short-pulse violet light sources.