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Resistive switching memory properties of layer-by-layer assembled enzyme multilayers.

Hyunhee Baek1, Chanwoo Lee, Kwang-il Lim

  • 1Department of Chemical and Biological Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713, Korea.

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|March 30, 2012
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Summary

Dried lysozyme (LYS) films exhibit voltage-induced resistance changes due to charge trapping, enabling their use in nonvolatile memory devices. This research highlights LYS as a promising material for advanced electronic applications.

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Area of Science:

  • Biomaterials Science
  • Nanotechnology
  • Electronics

Background:

  • Enzyme redox properties are crucial for bio-electrochemical applications, often linked to charge-trap sites.
  • Reversible changes in enzyme properties via redox reactions are of significant interest.

Purpose of the Study:

  • To demonstrate lysozyme (LYS) films as active materials for resistive switching in nonvolatile memory devices.
  • To investigate voltage-induced resistance changes in dried LYS films.

Main Methods:

  • Layer-by-layer assembly of cationic LYS and anionic poly(styrene sulfonate) (PSS) multilayers on Pt-coated silicon substrates.
  • Fabrication of memory-like devices by depositing top electrodes onto LYS/PSS multilayers.
  • Characterization of resistive switching properties, including ON/OFF current ratio and switching speed.

Main Results:

  • LYS/PSS multilayer devices showed typical resistive switching with ON/OFF ratios > 10^2 and fast switching speeds (100 ns).
  • Insertion of insulating polyelectrolytes (PEs) significantly enhanced memory performance, achieving ON/OFF ratios of ~10^6.
  • Devices demonstrated stable performance and low power consumption.

Conclusions:

  • Dried LYS films can function as resistive switching materials for nonvolatile memory applications.
  • Layer-by-layer assembly and PE incorporation are effective strategies to enhance device performance.
  • Lysozyme presents a viable biomaterial for advanced electronic memory devices.